Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...

Gallium Nitride (GaN) has continued its mission of taking over the universe spectrum. Not done with its secular presence, GaN is berthing in the space with its power transistors, which are an ideal ...

Growing concerns about energy efficiency have led to the development of electronics with higher power density. In grid-connected and industrial applications, such as AC motor control, uninterruptible ...