Lexington, Mass. – STMicroelectronics' FDmesh high-volt-age n-channel power MOSFETs are a follow-on to the company's existing MDmesh MOSFET technology, adding a body diode with a short recovery time.
MOSFETs have been the chosen transistor technology in most Switched Mode Power Supplies (SMPS) since the mid 1980’s. MOSFETs are used as the main switching transistor as well as to improve efficiency ...
Vishay Intertechnology, Inc. introduced the first two devices in its new 600 V EF Series of fast body diode n-channel power MOSFETs Vishay Intertechnology, Inc. introduced the first two devices in its ...
Embarking as the industry's first 190V n-channel power MOSFET with a co-packaged, 190V power diode, the SiA850DJ measures 2 mm x 2 mm x 0.75 mm and also claims to be the industry's first such device ...
Failure Mechanism Detection Algorithm With MOSFET Body Diode A defect diagnosis and physical damage detection method for electronic packaging are studied by measuring the thermal impedance through the ...
PLANO, Texas--(BUSINESS WIRE)--Diodes Incorporated (Diodes) (Nasdaq: DIOD) introduces the latest addition to its portfolio of Silicon Carbide (SiC) products: the DMWS120H100SM4 N-channel SiC MOSFET.
The first product released – AOK040A60 is a 600V 40mOhm αMOS5 low ohmic device with the industry-standard TO-247 package tailored to address the thermal challenges of today’s high-power AC/DC, DC/DC, ...
Toshiba Electronics Europe has launched the TPH2R70AR5, a new 100V-rated N-channel power MOSFET. The TPH2R70AR5 is a 100V-rated N-channel power MOSFET Credit: Toshiba Electronics Europe The device has ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...
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