Phoenix, Ariz. – Further expanding its portfolio of industry-leading Trench technology devices, ON Semiconductor today introduced eight new N-channel and P-channel, low voltage Trench MOSFETs. These ...
TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has released a dual MOSFET “SSM6N813R” with high ESD protection positioned for use in automotive applications, ...
This article is part of the TechXchange: Power Supply Design. To succeed in the world of power electronics, all it takes is a little silicon—literally. To prove it, power semiconductor companies are ...
Electrostatic discharge (ESD) is caused by the discharge of an excess or deficiency of electrons on one surface with respect to another surface or to ground. When a static charge is present on an ...
Electrostatic discharge (ESD) protection is critical at advanced nodes to safeguard designs against effects intensified by shrinking transistor dimensions and oxide layer thicknesses. On the other ...
As a designer or verification engineer, you’re fighting the effects of electrostatic discharge (ESD) in your integrated circuit (IC) designs all the time. ESD is one of those frustrating issues that ...
Power MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors) are three-terminal silicon devices that function by applying a signal to the gate that controls current conduction between source and ...
From traditional fuses to eFuses, understanding the advantages, limitations, and use cases of each technology helps engineers ...
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